In situ observation and correction of resist patterns in atomic force microscope lithography

被引：5
|
作者：
Shiokawa, T
Aoyagi, Y
Shigeno, M
Namba, S
机构：
[1] Inst Phys & Chem Res, Wako, Saitama 35101, Japan
[2] SII Seiko Instrument Inc, Matsudo, Chiba 271, Japan
[3] Nagasaki Inst Appl Sci, Nagasaki 85101, Japan
来源：
APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 19期
关键词：
D O I：
10.1063/1.121387
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In atomic force microscope lithography using negative-type resist, the increase of the resist thickness of the exposed part before development is observed in the dose range from 8x10(-13) to 10(-16) cm(-2). The increase is about 1 nm with a dose of 8x10(-13) cm(-2), which is less than one-tenth of the threshold dose for polymerization of resist. The phenomena of the increase bf resist thickness is used for in situ observation of the exposed pattern before development. With this in situ observation, precise correction of the lithography pattern can be made before development. (C) 1998 American Institute of Physics. [S0003-6951(98)02919-2].
引用
收藏
页码：2481 / 2483
页数：3
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