Atomic force microscope lithography with octadecyldimethyl-methoxysilane monolayer resist

被引:4
|
作者
Oh, Y [1 ]
Kim, J [1 ]
Lee, H [1 ]
机构
[1] Hanyang Univ, Dept Chem, Seoul 133791, South Korea
关键词
scanning probe anodization; nanolithography; organosilane; self-assembled monolayer; atomic force microscope;
D O I
10.1080/10587259908023367
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Nanometer-scare patterning of thin films was performed by using the atomic force microscope (AFM) as the exposing tool. The octadecyldimethyl-methoxysilane (ODMS) films were prepared on a silicon (Si) substrate by self-assembled monolayer. Patterning was accomplished through the local degradation of the monolayer as a result of anodic reaction induced by an AFM tip. When the voltage applied to the ODMS monolayer on the silicon substrate, the protruding lines appeared in the exposed regions. After etching probe-scanned substrate, we obtained fine grooves as narrow as 80 nm.
引用
收藏
页码:7 / 12
页数:6
相关论文
共 50 条
  • [1] In situ observation and correction of resist patterns in atomic force microscope lithography
    Shiokawa, T
    Aoyagi, Y
    Shigeno, M
    Namba, S
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (19) : 2481 - 2483
  • [2] Inorganic resist materials based on zirconium phosphonate for atomic force microscope lithography
    Kang, Mankyu
    Kim, Seonae
    Jung, JinHyuck
    Kim, Heebom
    Shin, Inkyun
    Jeon, Chanuk
    Lee, Haiwon
    [J]. ADVANCES IN PATTERNING MATERIALS AND PROCESSES XXXI, 2014, 9051
  • [3] Anodic oxidation lithography via atomic force microscope on organic resist layers
    Kim, Sung-Kyoung
    Lee, Haiwon
    [J]. POLYMER-KOREA, 2006, 30 (03) : 187 - 195
  • [4] Combination of photo and atomic force microscope lithographies by use of an organosilane monolayer resist
    Sugimura, H
    Nakagiri, N
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (7B): : L968 - L970
  • [5] Study of overlay metrology in atomic force microscope lithography (overlaying lithography with atomic force microscope)
    Li, Xiaona
    Han, Li
    Gu, Wenqi
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (06): : 3101 - 3104
  • [6] Atomic force microscope lithography with organosilane resists
    Oh, Y
    Kim, J
    Lee, H
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 35 : S1013 - S1016
  • [7] ATOMIC-FORCE MICROSCOPE LITHOGRAPHY USING AMORPHOUS-SILICON AS A RESIST AND ADVANCES IN PARALLEL OPERATION
    MINNE, SC
    FLUECKIGER, P
    SOH, HT
    QUATE, CF
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (03): : 1380 - 1385
  • [8] Independent parallel lithography using the atomic force microscope
    Minne, SC
    Manalis, SR
    Atalar, A
    Quate, CF
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (04): : 2456 - 2461
  • [9] Fabrication and characterization of nanowires by atomic force microscope lithography
    Fok, L. M.
    Liu, Y. H.
    Li, Wen J.
    [J]. 2006 IEEE/RSJ INTERNATIONAL CONFERENCE ON INTELLIGENT ROBOTS AND SYSTEMS, VOLS 1-12, 2006, : 1927 - +
  • [10] Characterization of structures fabricated by atomic force microscope Lithography
    Fu, ES
    Wang, XS
    Williams, ED
    [J]. SURFACE SCIENCE, 1999, 438 (1-3) : 58 - 67