Back-illuminated ultraviolet image sensor in silicon-on-sapphire

被引：0
|
作者：
Park, Joon Hyuk [1 ]
Culurciello, Eugenio [1 ]
机构：
[1] Yale Univ, Dept Elect Engn, New Haven, CT 06520 USA
来源：
PROCEEDINGS OF 2008 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-10 | 2008年
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
We present a back-illuminated 32 x 32 pixel SOI image sensor chip in 0.5-mu m silicon-on-sapphire process capable of ultraviolet imaging. The imager performs "snap-shot" image acquisition and analog readout at a continuous rate of a thousand frames/s and consumes as little as 650 mu W. Each pixel consists of a photodiode and a memory capacitor in 40 mu m x 40 mu m with a fill factor of 43%. The image sensor is suited for hyper-spectral imaging at high speeds.
引用
收藏
页码：1854 / 1857
页数：4
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