Back-Illuminated three-dimensionally integrated CMOS image sensors for scientific applications

被引：3
|
作者：
Suntharalingam, Vyshnavi [1 ]
Rathman, Dennis D. [1 ]
Pn'gozhin, Gregory [2 ]
Kissel, Steven [2 ]
Bautz, Mark [2 ]
机构：
[1] MIT, Lincoln Lab, 244 Wood St, Lexington, MA 02173 USA
[2] MIT, Kavali Inst Astrophys & Space Res, Lexington, MA 02173 USA
来源：
FOCAL PLANE ARRAYS FOR SPACE TELESCOPES III | 2007年 / 6690卷
关键词：
SOI; active pixel imager; CCD; back-illumination; three-dimensional integration;
D O I：
10.1117/12.739807
中图分类号：
P1 [天文学];
学科分类号：
0704 ;
摘要：
SOI-based active pixel image sensors have been built in both monolithic and vertically interconnected pixel technologies. The latter easily supports the inclusion of more complex pixel circuitry without compromising pixel fill factor. A wafer-scale back-illumination process is used to achieve 100% fill factor photodiodes. Results from 256 x 256 and 1024 x 1024 pixel arrays are presented, with discussion of dark current improvement in the differing technologies.
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页数：10
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