Back-illuminated ultraviolet image sensor in silicon-on-sapphire

被引：0

作者：

Park, Joon Hyuk ^{[1
]}

Culurciello, Eugenio ^{[1
]}

机构：

[1] Yale Univ, Dept Elect Engn, New Haven, CT 06520 USA

来源：

PROCEEDINGS OF 2008 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-10 | 2008年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We present a back-illuminated 32 x 32 pixel SOI image sensor chip in 0.5-mu m silicon-on-sapphire process capable of ultraviolet imaging. The imager performs "snap-shot" image acquisition and analog readout at a continuous rate of a thousand frames/s and consumes as little as 650 mu W. Each pixel consists of a photodiode and a memory capacitor in 40 mu m x 40 mu m with a fill factor of 43%. The image sensor is suited for hyper-spectral imaging at high speeds.

引用

页码：1854 / 1857

页数：4

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