A 50-90 GHz High Efficiency Fully integrated 0.13 μm Si Ge Power Amplifier

被引：0
|
作者：
Mosalam, Hamed [1 ,2 ]
Rizk, Mohamed [3 ]
Kamal, Mohamed [4 ,5 ]
Abdullah, Haytham H. [6 ]
机构：
[1] Elect Res Inst, Microelect Engn Dept, Cairo, Egypt
[2] Southern Univ Sci & Technol, Shenzhen, Peoples R China
[3] Elect Res Inst, Dept Nanotechnol, Cairo, Egypt
[4] Fayoum Univ, Fac Engn, Faiyum, Egypt
[5] Ulm Univ, Inst Elect Bldg Blocks & Circuits, Ulm, Germany
[6] Elect Res Inst, Microwave Engn Dept, Cairo, Egypt
来源：
31ST INTERNATIONAL CONFERENCE ON MICROELECTRONICS (IEEE ICM 2019) | 2019年
关键词：
power amplifier (PA); SiGe:C (HBT); Power Added Efficiency; 77-GHZ;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The design and simulation of wideband 50 GHz- 90 GHz power amplifier(PA) using 0.13 mu m BiCMOS SiGe:C HBT technology is presented. Stagger tuning technique is utilized to achieve the wideband performance. Source and Load-pull contours are used for improving the output power and power added efficiency. The proposed wideband power amplifier achieves post-layout power gain (S-21) of 18.5 dB +/- 1.8 dB; input and output return loss below -7 dB and -8 dB, respectively over the 50 GHz to 90 GHz frequency range. Furthermore, the PA delivers saturated output power of 15 dBm with 19% power added efficiency (PAE) at 77 GHz. Moreover, the proposed SiGe power amplifier consumes only 120 mW from 3.3V voltage supply.
引用
收藏
页码：74 / 77
页数：4
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