A 50-90 GHz High Efficiency Fully integrated 0.13 μm Si Ge Power Amplifier

被引：0

作者：

Mosalam, Hamed ^{[1
,2
]}

Rizk, Mohamed ^{[3
]}

Kamal, Mohamed ^{[4
,5
]}

Abdullah, Haytham H. ^{[6
]}

机构：

[1] Elect Res Inst, Microelect Engn Dept, Cairo, Egypt

[2] Southern Univ Sci & Technol, Shenzhen, Peoples R China

[3] Elect Res Inst, Dept Nanotechnol, Cairo, Egypt

[4] Fayoum Univ, Fac Engn, Faiyum, Egypt

[5] Ulm Univ, Inst Elect Bldg Blocks & Circuits, Ulm, Germany

[6] Elect Res Inst, Microwave Engn Dept, Cairo, Egypt

来源：

31ST INTERNATIONAL CONFERENCE ON MICROELECTRONICS (IEEE ICM 2019) | 2019年

关键词：

power amplifier (PA); SiGe:C (HBT); Power Added Efficiency; 77-GHZ;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The design and simulation of wideband 50 GHz- 90 GHz power amplifier(PA) using 0.13 mu m BiCMOS SiGe:C HBT technology is presented. Stagger tuning technique is utilized to achieve the wideband performance. Source and Load-pull contours are used for improving the output power and power added efficiency. The proposed wideband power amplifier achieves post-layout power gain (S-21) of 18.5 dB +/- 1.8 dB; input and output return loss below -7 dB and -8 dB, respectively over the 50 GHz to 90 GHz frequency range. Furthermore, the PA delivers saturated output power of 15 dBm with 19% power added efficiency (PAE) at 77 GHz. Moreover, the proposed SiGe power amplifier consumes only 120 mW from 3.3V voltage supply.

引用

页码：74 / 77

页数：4

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