A Fully Integrated Distributed Active Transformer Based Power Amplifier in 0.13 μm CMOS Technology

被引：0

作者：

Khan, H. R. ^{[1
]}

Sajid, U. ^{[1
]}

Kanwal, S. ^{[1
]}

Zafar, F. ^{[1
]}

Wahab, Q. ^{[1
]}

机构：

[1] NED Univ Engn & Technol, Ctr Elect Design, Karachi, Pakistan

来源：

2013 SAUDI INTERNATIONAL ELECTRONICS, COMMUNICATIONS AND PHOTONICS CONFERENCE (SIECPC) | 2013年

关键词：

component; Distributed Active Transformer; Power Amplifier; Inverse Class D; Fully integrated;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a fully integrated CMOS Power Amplifier designed in 0.13 um CMOS technology. The power combining topology based upon Distributed Active Transformer structures is employed to achieve high output power from several stages. A simple design methodology for DAT modeling is presented and the suitability of inverse Class-D amplifier in DAT is discussed. Simulation results validate the methodology and use of inverse Class-D amplifier. The designed PA delivers output power of 27.6 dBm at 1.8 GHz from a 1 V DC supply at 46.3% PAE while keeping the device stress within safe limits. The efficiency is maximum at 52% at 1.7 GHz. The amplifier is suitable for GSM, PCS and other wireless standards.

引用

页数：6

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