An Accurate Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs

被引：18

作者：

Aguirre-Morales, Jorge-Daniel ^{[1
]}

Fregonese, Sebastien ^{[1
]}

Mukherjee, Chhandak ^{[1
]}

Maneux, Cristell ^{[1
]}

Zimmer, Thomas ^{[1
]}

机构：

[1] Univ Bordeaux, IMS Lab, CNRS, F-33415 Talence, France

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 12期

关键词：

Bilayer; compact model; FET; graphene; large signal; Verilog-A; CURRENT SATURATION; TRANSISTORS; BANDGAP;

D O I：

10.1109/TED.2015.2487243

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, an accurate compact model based on physical mechanisms for dual-gate bilayer graphene FETs is presented. This model is developed based on the 2-D density of states of bilayer graphene and is implemented in Verilog-A. Furthermore, physical equations describing the behavior of the source and drain access regions under back-gate bias are proposed. The accuracy of the developed large-signal compact model has been verified by comparison with measurement data from the literature.

引用

页码：4327 / 4333

页数：7

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