Physics-Based Electrical Compact Model for Monolayer Graphene FETs

In this paper, we report an accurate physics-based compact model for monolayer Graphene Field-Effect Transistors (GFETs) based on the density of states (DOS) of monolayer graphene. The charge-based model computes the total current considering a branch separation between the electron and hole contributions preserving a good accuracy near the Dirac point. The effect of back-gate is included in the charge equations applicable for dual-gate GFETs along with implementation of the residual carrier density, velocity saturation and access resistances contributing to an accurate description of the drain current. Moreover, the developed large-signal compact model incorporates an accurate description of the gate-capacitances (C-GS, C-GD) that extends the model's capabilities to AC simulations. Finally, the model has been implemented in Verilog-A and its accuracy is validated through comparison with DC and RF measurements from different GFET technologies.