Research on the Performance of P- i- n Type GaN Ultraviolet Photoelectric Detector

被引：0

作者：

Sun, Yuanyuan ^{[1
]}

Liu, Shibo ^{[2
]}

Ren, Jiayue ^{[1
]}

Zhong, Yongbing ^{[1
]}

Jia, Qiurui ^{[1
]}

机构：

[1] Aviat Univ Air Force, Changchun, Jilin, Peoples R China

[2] Hydrol & Water Resources Bur, Changchun, Jilin, Peoples R China

来源：

MANUFACTURING PROCESS AND EQUIPMENT, PTS 1-4 | 2013年 / 694-697卷

关键词：

MOCVD; GaN; p-i-n; Ultraviolet; Photoelectric; MSM; Detector; BLIND; PHOTODETECTORS;

D O I：

10.4028/www.scientific.net/AMR.694-697.1021

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

GaN ultraviolet photoelectric detecting technique has important application value in the spacecraft, fire monitoring, ultraviolet communication and other fields. In this paper, p-type GaN samples were obtained after rapid annealing of GaN mixing Mg at 700 similar to 800 degrees C. Then, p-i-n type GaN ultraviolet photoelectric detectors were fabricated on Al2O3 substrates by metal organic chemical vapor phase epitaxial deposition method. The devices have better rectifying behavior which can be demonstrated by the I-V curve. The response time of the device is 1.6 mu s and its higher responsivity is 0.95A/W.

引用

页码：1021 / +

页数：2

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