Avalanche breakdown and breakdown luminescence in p-π-n GaN diodes

被引：39
|
作者：
Osinsky, A
Shur, MS
Gaska, R
Chen, Q
机构：
[1] APA Opt Inc, Blaine, MN 55449 USA
[2] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA
来源：
ELECTRONICS LETTERS | 1998年 / 34卷 / 07期
关键词：
D O I：
10.1049/el:19980535
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors report the observation of electric breakdown in graded p-pi-n GaN photodiodes. The breakdown is accompanied by microplasma formation. The photocurrent strongly increases at the breakdown voltages, demonstrating a potential use of these devices as avalanche photodiodes (APDs).
引用
收藏
页码：691 / 692
页数：2
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