4.9 kV breakdown voltage vertical GaN p-n junction diodes with high avalanche capability

被引：40

作者：

Ohta, Hiroshi ^{[1
]}

Asai, Naomi ^{[1
]}

Horikiri, Fumimasa ^{[2
]}

Narita, Yoshinobu ^{[2
]}

Yoshida, Takehiro ^{[2
]}

Mishima, Tomoyoshi ^{[1
]}

机构：

[1] Hosei Univ, Tokyo 1848584, Japan

[2] SCIOCS Co Ltd, Hitachi, Ibaraki 3191418, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2019年 / 58卷 / SC期

关键词：

POWER DIODES; SUBSTRATE;

D O I：

10.7567/1347-4065/ab0cfa

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In order to avoid sudden catastrophic hard breakdown in high breakdown voltage vertical GaN p-n junction diodes, punch-through induced breakdown structures have been newly considered. Mg acceptor concentration in the p-GaN layer was reduced so that the punch-through breakdown occurred before the hard breakdown. By using a wafer with triple drift layers and the p-GaN layer with lowered Mg concentration of 3 x 10(17) cm(-3) grown on a freestanding n-GaN substrate, the diode showed a high breakdown voltage of 4.9 kV with high reverse avalanche capabilities against sudden increase of reverse current over 5 orders of magnitudes. No degradation was observed after fifteen repetitive measurements. (C) 2019 The Japan Society of Applied Physics

引用

页数：4

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