A Subthreshold Surface Potential Model to Study the effect of Dual Material Gate in Gate All Around n-TFETs

被引：0
|
作者：
Ghosh, Sayani [1 ]
Sarkar, Chandan K. [1 ]
机构：
[1] Jadavpur Univ, Dept Elect & Telecommun Engg, Kolkata, India
来源：
PROCEEDINGS OF THE 2012 INTERNATIONAL CONFERENCE ON COMMUNICATIONS, DEVICES AND INTELLIGENT SYSTEMS (CODLS) | 2012年
关键词：
Gate All Around (GAA); TFET; Dual Material Gate; Surface Potential; TUNNEL FET;
D O I：
暂无
中图分类号：
TP18 [人工智能理论];
学科分类号：
081104 ; 0812 ; 0835 ; 1405 ;
摘要：
In this paper, an analytical Pseudo 2D model of surface potential for dual material surrounding gate tunneling field effect transistor (TFET) is presented. The major drawback of the TFET is low ON- current and its poor immunity against the Drain induced barrier lowering effects. These drawbacks can be alleviated by using dual material gate without disturbing other performance parameters. This paper present a simple pseudo 2 dimensional analysis of the surface potential, to study the effect of dual material gate on the I-d-V-g characteristics, potential energy, electric field and surface potential of a GAA n-TFET.
引用
收藏
页码：153 / 156
页数：4
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