Electron emission from a heteroepitaxial diamond planar emitter

被引：1
|
作者：
Yamada, T [1 ]
Maede, J [1 ]
Sawabe, A [1 ]
机构：
[1] Aoyama Gakuin Univ, Dept Elect & Elect Engn, Setagaya Ku, 6-16-1 Chitosedai, Tokyo 1578572, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1999年 / 38卷 / 8B期
关键词：
electron emission; emission uniformity; diamond emitter; heteroepitaxial diamond; direct current CVD;
D O I：
10.1143/JJAP.38.L902
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Heteroepitaxial diamond (100) with relatively smooth surface morphology is grown on iridium thin film by direct current plasma chemical vapor deposition, and its electron emission is discussed by comparing the electron emission of polycrystalline diamond with the various surface morphology. From the results of electron emission measurements, the emission property from heteroepitaxial diamond is independent of the measurement point, while that from polycrystalline diamond strongly depends on the measurement points. In addition, electron emission from heteroepitaxial diamond was observed at lower voltage compared to that from polycrystalline diamond.
引用
收藏
页码：L902 / L903
页数：2
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