Lg=25 nm InGaAs/InAlAs high-electron mobility transistors with both fT and fmax in excess of 700 GHz

被引：28

作者：

Jo, Hyeon-Bhin ^{[1
]}

Yun, Do-Young ^{[1
]}

Baek, Ji-Min ^{[1
]}

Lee, Jung-Hee ^{[1
]}

Kim, Tae-Woo ^{[2
]}

Kim, Dae-Hyun ^{[1
]}

Tsutsumi, Takuya ^{[3
]}

Sugiyama, Hiroki ^{[3
]}

Matsuzaki, Hideaki ^{[3
]}

机构：

[1] Kyungpook Natl Univ, Sch Elect Engn, Daegu, South Korea

[2] Univ Ulsan, Sch Elect Engn, Ulsan, South Korea

[3] NTT Device Technol Labs, Atsugi, Kanagawa, Japan

来源：

APPLIED PHYSICS EXPRESS | 2019年 / 12卷 / 05期

基金：

新加坡国家研究基金会;

关键词：

LOW-NOISE; INP HEMT; FREQUENCY; PARAMETERS; DESIGN;

D O I：

10.7567/1882-0786/ab1943

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, we report an L-g = 25 nm InGaAs/InAlAs HEMT on InP substrate that delivers excellent high-frequency characteristics. The device exhibited a value of maximum transconductance (g(m_max)) = 2.8 mS mu m(-1) at V-DS = 0.8 V and on-resistance (R-ON) = 279 Omega mu m. At I-D = 0.56 mA mu m(-1) and V-DS = 0.5 V, the same device displayed an excellent combination of f(T) = 703 GHz and f(max) = 820 GHz. To the best of the authors' knowledge, this is the first demonstration of a transistor with both f(T) and f(max) over 700 GHz on any material system. (C) 2019 The Japan Society of Applied Physics

引用

页数：4

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