High optical responsivity of InAlAs-InGaAs metamorphic high-electron mobility transistor on GaAs substrate with composite channels

被引：50
|
作者：
Choi, CS [1 ]
Kang, HS
Choi, WY
Kim, HJ
Choi, WJ
Kim, DH
Jang, KC
Seo, KS
机构：
[1] Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea
[2] Korea Inst Sci & Technol, Nanodevice Res Ctr, Seoul 136792, South Korea
[3] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2003年 / 15卷 / 06期
关键词：
metamorphic high-electron mobility transistor; (HEMT); photodetector; phototransistor; responsivity;
D O I：
10.1109/LPT.2003.811339
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The high optical responsivity of the InAlAs-InGaAs metamorphic high-electron mobility transistor on GaAs substrate with composite channels is reported. Experimental results verify that the photovoltaic effect causing the effective decrease of threshold voltage is responsible for the photoresponse to a 1.55-mum optical illumination.
引用
收藏
页码：846 / 848
页数：3
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