Lg=25 nm InGaAs/InAlAs high-electron mobility transistors with both fT and fmax in excess of 700 GHz

被引：28
|
作者：
Jo, Hyeon-Bhin [1 ]
Yun, Do-Young [1 ]
Baek, Ji-Min [1 ]
Lee, Jung-Hee [1 ]
Kim, Tae-Woo [2 ]
Kim, Dae-Hyun [1 ]
Tsutsumi, Takuya [3 ]
Sugiyama, Hiroki [3 ]
Matsuzaki, Hideaki [3 ]
机构：
[1] Kyungpook Natl Univ, Sch Elect Engn, Daegu, South Korea
[2] Univ Ulsan, Sch Elect Engn, Ulsan, South Korea
[3] NTT Device Technol Labs, Atsugi, Kanagawa, Japan
来源：
APPLIED PHYSICS EXPRESS | 2019年 / 12卷 / 05期
基金：
新加坡国家研究基金会;
关键词：
LOW-NOISE; INP HEMT; FREQUENCY; PARAMETERS; DESIGN;
D O I：
10.7567/1882-0786/ab1943
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this paper, we report an L-g = 25 nm InGaAs/InAlAs HEMT on InP substrate that delivers excellent high-frequency characteristics. The device exhibited a value of maximum transconductance (g(m_max)) = 2.8 mS mu m(-1) at V-DS = 0.8 V and on-resistance (R-ON) = 279 Omega mu m. At I-D = 0.56 mA mu m(-1) and V-DS = 0.5 V, the same device displayed an excellent combination of f(T) = 703 GHz and f(max) = 820 GHz. To the best of the authors' knowledge, this is the first demonstration of a transistor with both f(T) and f(max) over 700 GHz on any material system. (C) 2019 The Japan Society of Applied Physics
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页数：4
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