Comparisons of the Hot Carrier Effect in Quasi-Silicon-on-Insulator and Conventional Silicon-on-Insulator Power Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Reversed Silicon Wafer Direct Bonding

被引：4

作者：

Matsumoto, Satoshi ^{[1
]}

机构：

[1] NTT Energy & Environm Syst Labs, Kanagawa 2430198, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 12期

关键词：

silicon-on-insulator; power MOSFET; hot carrier;

D O I：

10.1143/JJAP.47.8739

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The hot carrier effect. in quasi-silicon-on-insulator (SOI) and conventional SOI power metal-oxide-semiconductor field-effect transistors (MOSFETs) was compared on the basis of experimental results. Device degradation caused by the hot carrier effect in the quasi-SOI power MOSFETs proved to be smaller than in the conventional SOI power MOSFETs because the former can suppress the activation of parasitic bipolar transistors. [DOI: 10.1143/JJAP.47.8739]

引用

页码：8739 / 8742

页数：4

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