Impact of silicon-on-insulator substrate parameters on the radio frequency performance of quasi-silicon-on-insulator power metal-oxide-semiconductor field effect transistors

被引：0

作者：

机构：

[1] Matsumoto, Satoshi

[2] Hiraoka, Yasushi

[3] Yachi, Toshiaki

来源：

Matsumoto, S. | 1600年 / Japan Society of Applied Physics卷 / 42期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[1] Impact of silicon-on-insulator substrate parameters on the radio frequency performance of quasi-silicon-on-insulator power metal-oxide-semiconductor field effect transistors
Matsumoto, S
Hiraoka, Y
Yachi, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (5A): : 2560 - 2563
[2] Comparisons of radio-frequency performance of quasi-silicon-on-insulator and conventional silicon-on-insulator power metal-oxide-semiconductor field-effect-transistors
Hiraoka, Yasushi
Matsumoto, Satoshi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (12): : 7635 - 7638
[3] Comparisons of radio-frequency performance of quasi-silicon-on-insulator and conventional silicon-on-insulator power metal-oxide-semiconductor field-effect-transistors
Hiraoka, Yasushi
Matsumoto, Satoshi
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2007, 46 (12): : 7635 - 7638
[4] Comparisons of the Hot Carrier Effect in Quasi-Silicon-on-Insulator and Conventional Silicon-on-Insulator Power Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Reversed Silicon Wafer Direct Bonding
Matsumoto, Satoshi
JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (12) : 8739 - 8742
[5] RANDOM TELEGRAPH SIGNALS IN SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
SIMOEN, E
CLAEYS, C
JOURNAL OF APPLIED PHYSICS, 1994, 75 (07) : 3647 - 3653
[6] Ambipolar Schottky barrier silicon-on-insulator metal-oxide-semiconductor transistors
Lin, HC
Wang, MF
Lu, CY
Huang, TY
SOLID-STATE ELECTRONICS, 2003, 47 (02) : 247 - 251
[7] Random telegraph signals in silicon-on-insulator metal-oxide-semiconductor transistors
1600, American Inst of Physics, Woodbury, NY, USA (75):
[8] Enhanced electroluminescence in silicon-on-insulator metal-oxide-semiconductor transistors with thin silicon layer
Karsenty, A
Sa'ar, A
Ben-Yosef, N
Shappir, J
APPLIED PHYSICS LETTERS, 2003, 82 (26) : 4830 - 4832
[9] Universal Relationship between Substrate Current and History Effect in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors
Amakawa, Shuhei
Toda, Asato
Ohyama, Katsuroh
Higashiguchi, Naoya
Hori, Daisuke
Shintaku, Yasuhiro
Miyake, Masataka
Miura-Mattausch, Mitiko
JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (04)
[10] Experimental investigation of pattern layout effect on radio-frequency performance of thin-film silicon-on-insulator power metal-oxide-semiconductor field-effect transistors
Matsumoto, Satoshi
Mino, Masato
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (9A): : 5691 - 5694

← 1 2 3 4 5 →