Energy-Delay Tradeoffs of Low-Voltage Dual Mode Logic in 28nm FD-SOI

被引:0
|
作者
Taco, Ramiro [1 ]
Levi, Itamar [1 ]
Lanuzza, Marco [2 ]
Fish, Alexander [1 ]
机构
[1] Bar Ilan Univ, Ramat Gan, Israel
[2] Univ Calabria, Arcavacata Di Rende, CS, Italy
基金
以色列科学基金会;
关键词
Dual mode logic (DML); low-voltage; carry skip adder; DESIGNS;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, the Dual Mode Logic (DML) technique is evaluated on a low-voltage 16-bit Carry Skip Adder in 28 nm UTBB FD-SOI technology. By combining the operating characteristics of the DML and the unique features of the technology, energy/speed efficient low-voltage adder designs can be defined. More precisely, it is demonstrated that, the capability of the DML design to switch on-the-fly between static and dynamic modes of operation leads to an improvement of more than 20% in terms of energy-delay product (EDP) in comparison to the conventional CMOS design. Moreover, the high efficiency of back plane biasing in the adopted technology allows very fine tuning of energy-delay performances of a DML design, thus emphasizing its intrinsic versatility.
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