Gate-tunable selective operation of single electron/hole transistor modes in a silicon single quantum dot at room temperature

被引：16

作者：

Lee, Sejoon ^{[1
]}

Lee, Youngmin ^{[2
]}

Song, Emil B. ^{[3
]}

Wang, Kang L. ^{[3
]}

Hiramoto, Toshiro ^{[4
]}

机构：

[1] Dongguk Univ Seoul, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea

[2] Dongguk Univ Seoul, Dept Semicond Sci, Seoul 100715, South Korea

[3] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

[4] Univ Tokyo, Inst Ind Sci, Tokyo 1538505, Japan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

ENERGY;

D O I：

10.1063/1.4793564

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a gate-tunable selective operation of single-electron-transistor (SET) and single-hole-transistor (SHT) in a unit silicon (Si) quantum dot (QD) system at room temperature. The small sized Si-QD (similar to 7 nm) with well-defined tunnel barriers, which are formed along the p(+)-i-n(+) Si nanowire in both the conduction band and the valence band, permits the alternative use of quantum states for electrons or holes to be selected by the polarity of the gate bias. The device shows clear Coulomb blockade and negative differential-conductance oscillations on both gate-tunable SET and SHT modes as a result of quantum transport in the p(+)-i-n(+) Si QD system. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4793564]

引用

页数：4

共 50 条

[41] Room temperature single electron charging in single silicon nanochains
Rafiq, M.A.
Durrani, Z.A.K.
Mizuta, H.
Colli, A.
Servati, P.
Ferrari, A.C.
Milne, W.I.
Oda, S.
[J]. Journal of Applied Physics, 2008, 103 (05):
[42] Room temperature single electron charging in single silicon nanochains
Rafiq, M. A.
Durrani, Z. A. K.
Mizuta, H.
Colli, A.
Servati, P.
Ferrari, A. C.
Milne, W. I.
Oda, S.
[J]. JOURNAL OF APPLIED PHYSICS, 2008, 103 (05)
[43] Room temperature single-hole silicon memory
Bagraev, NT
Bouravleuv, AD
Klyachkin, LE
Malyarenko, AM
Rykov, SA
[J]. PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 2000, 9-10 : 51 - 59
[44] Single electron dynamics in a quantum dot field effect transistor
Kardynal, B. E.
Shields, A. J.
Farrer, I.
Cooper, K.
Ritchie, D. A.
[J]. APPLIED PHYSICS LETTERS, 2006, 89 (11)
[45] Cyclotron localization in a sub-10-nm silicon quantum dot single electron transistor
Lin, M. C.
Aravind, K.
Wu, C. S.
Wu, Y. P.
Kuan, C. H.
Kuo, Watson
Chen, C. D.
[J]. APPLIED PHYSICS LETTERS, 2007, 90 (03)
[46] Accurate Calculation of Quantum Kinetic Energy of Single-electron Transistor at Room Temperature
Chen, Xiaobao
Xing, Zuocheng
Sui, Bingcai
[J]. 2013 13TH IEEE CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO), 2013, : 993 - 996
[47] Fabrication of a germanium quantum-dot single-electron transistor with large Coulomb-blockade oscillations at room temperature
Li, PW
Liao, WM
Kuo, DMT
Lin, SW
Chen, PS
Lu, SC
Tsai, MJ
[J]. APPLIED PHYSICS LETTERS, 2004, 85 (09) : 1532 - 1534
[48] Modeling of a Room-Temperature Silicon Quantum Dot-Based Single-Electron Transistor and the Effect of Energy-Level Broadening on Its Performance
Miralaie, M.
Leilaeioun, M.
Abbasian, K.
[J]. JOURNAL OF ELECTRONIC MATERIALS, 2013, 42 (01) : 47 - 57
[49] Modeling of a Room-Temperature Silicon Quantum Dot-Based Single-Electron Transistor and the Effect of Energy-Level Broadening on Its Performance
M. Miralaie
M. Leilaeioun
K. Abbasian
[J]. Journal of Electronic Materials, 2013, 42 : 47 - 57
[50] A silicon self assembled quantum dot transistor operating at room temperature.
Choi, BH
Hwang, SW
Kim, IG
Shin, HC
Kim, Y
Kim, EK
[J]. MICROELECTRONIC ENGINEERING, 1999, 47 (1-4) : 115 - 117

← 1 2 3 4 5 →