Gate-tunable selective operation of single electron/hole transistor modes in a silicon single quantum dot at room temperature

被引：16

作者：

Lee, Sejoon ^{[1
]}

Lee, Youngmin ^{[2
]}

Song, Emil B. ^{[3
]}

Wang, Kang L. ^{[3
]}

Hiramoto, Toshiro ^{[4
]}

机构：

[1] Dongguk Univ Seoul, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea

[2] Dongguk Univ Seoul, Dept Semicond Sci, Seoul 100715, South Korea

[3] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

[4] Univ Tokyo, Inst Ind Sci, Tokyo 1538505, Japan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

ENERGY;

D O I：

10.1063/1.4793564

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a gate-tunable selective operation of single-electron-transistor (SET) and single-hole-transistor (SHT) in a unit silicon (Si) quantum dot (QD) system at room temperature. The small sized Si-QD (similar to 7 nm) with well-defined tunnel barriers, which are formed along the p(+)-i-n(+) Si nanowire in both the conduction band and the valence band, permits the alternative use of quantum states for electrons or holes to be selected by the polarity of the gate bias. The device shows clear Coulomb blockade and negative differential-conductance oscillations on both gate-tunable SET and SHT modes as a result of quantum transport in the p(+)-i-n(+) Si QD system. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4793564]

引用

页数：4

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