A 60 GHz transformer-coupled neutralized low power CMOS power amplifier

被引：3

作者：

Chen, Bo ^{[1
]}

Shen, Li ^{[1
]}

Gao, Jianjun ^{[1
]}

机构：

[1] China Normal Univ, Sch Informat & Sci Technol, Shanghai 200241, Peoples R China

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2015年 / 57卷 / 11期

基金：

中国国家自然科学基金;

关键词：

CMOS; power amplifier; millimeter wave; transformer; DESIGN;

D O I：

10.1002/mop.29378

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 60 GHz transformer-coupled class AB 3-stage low power amplifier (PA) has been implemented in a 130 nm standard RF-CMOS process. The transformer, featuring direct impedance transformation and power combining is suitable for 60 GHz power amplifier design. This power amplifier operates from 1.2 V supply with 9.9 dB gain at 62 GHz, dissipates 58 mW DC power, and the reverse isolation is better than 39 dB from 50 to 67 GHz. (c) 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:2487-2491, 2015

引用

页码：2487 / 2491

页数：5

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