17-dB-Gain CMOS Power Amplifier at 60GHz

被引：0

作者：

Dawn, Debasis ^{[1
]}

Sarkar, Saikat ^{[1
]}

Sen, Padmanava ^{[1
]}

Perumana, Bevin ^{[1
]}

Yeh, David ^{[1
]}

Pinel, Stephane ^{[1
]}

Laskar, Joy ^{[1
]}

机构：

[1] Georgia Inst Technol, Atlanta, GA 30332 USA

来源：

2008 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4 | 2008年

关键词：

millimeter wave; 60GHz; power amplifier (PA); CMOS; 90nm; small signal gain; PAE; temperature characteristics;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 60 GHz power amplifier with 17dB small signal gain is designed and measured using standard 90nm CMOS process technology. Simulation predicted accurate performances. The 3-dB bandwidth exceeding 57 to 65 GHz is achieved. This power amplifier delivers +5.1dBm output P1dB with a maximum gain of 17dB at 61 GHz for 54mW total DC consumption, achieving 5.8% PAE and a saturated output power of +8.4dBm at 60GHz This is the highest gain CMOS power amplifier operating in the 60 GHz unlicensed band reported till date. The first temperature dependent output power characteristics of 60GHz CMOS power amplifier shows very stable operation over the entire temperature range between 0 degrees C and +80 degrees C.

引用

页码：1121 / 1124

页数：4

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