Bias Temperature Stress Instability of Multilayered MoS2 Field-Effect Transistors With CYTOP Passivation

被引:17
|
作者
Seo, Seung Gi [1 ]
Jin, Sung Hun [1 ]
机构
[1] Incheon Natl Univ, Dept Elect Engn, Incheon 22012, South Korea
关键词
Bias temperaturestress; cyclized transparent optical polymer (CYTOP) passivation; MoS2; FETs; trap energy distribution; STABILITY; DEVICE;
D O I
10.1109/TED.2019.2904338
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Bias temperature stress instability on multi-layered MoS2 FETs was systematically investigated with the device scheme encapsulated with amorphous fluoropolymers [cyclized transparent optical polymer (CYTOP)] for the secure of minimization of external gas ambient effects. Large threshold voltage shifts (Delta V-th) for the negative bias temperature stress (NBTS) were observed, compared to the positive bias temperature stress (PBTS). Herein, the asymmetry behaviors on Delta V-th, observed in this paper, are ascribed to the sulfur vacancy in MoS2 layers, leading to large hole traps compared to electron traps in MoS2 layers. Moreover, high-temperature-sensitivity [d (Delta V-th)/dT] on Delta V-th for PBTS than NBTS was observed, and their origins are possibly due to synergetic effects associated with large trap energy distribution (k(o)T) for electron trap levels.
引用
收藏
页码:2208 / 2213
页数:6
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