共 50 条
- [2] Persistent Photoconductivity, Hysteresis and Field Emission in MoS2 Back-Gate Field-Effect Transistors [J]. 2018 IEEE 13TH NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE (NMDC), 2018, : 351 - 352
- [4] In Situ 2D MoS2 Field-Effect Transistors with an Electron Beam Gate [J]. ACS NANO, 2020, 14 (06) : 7389 - 7397
- [9] GATE LEAKAGE CURRENTS IN MOS FIELD-EFFECT TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (08): : 1098 - &