Temperature-Dependent Opacity of the Gate Field Inside MoS2 Field-Effect Transistors

被引:7
|
作者
Ji, Hyunjin [1 ,2 ]
Ghimire, Mohan Kumar [1 ]
Lee, Gwanmu [1 ]
Yi, Hojoon [1 ]
Sakong, Wonkil [1 ]
Gul, Hamza Zad [1 ]
Yun, Yoojoo [3 ]
Jiang, Jinbao [1 ]
Kim, Joonggyu [1 ]
Joo, Min-Kyu [4 ]
Suh, Dongseok [1 ]
Lim, Seong Chu [1 ,5 ]
机构
[1] Sungkyunkwan Univ, Dept Energy Sci, Suwon 440746, South Korea
[2] Sungkyunkwan Univ, Inst New Paradigm Energy Sci Convergence, Suwon 440746, South Korea
[3] Pusan Natl Univ, Dept Phys, Busan 46241, South Korea
[4] Sookmyung Womens Univ, Dept Appl Phys, Seoul 04310, South Korea
[5] Sungkyunkwan Univ, Inst Basic Sci, Ctr Integrated Nanostruct Phys, Suwon 440746, South Korea
基金
新加坡国家研究基金会;
关键词
MoS2; S vacancies; interlayer coupling; temperature-dependent gate-field attenuation; dual-gated transistor; HETEROSTRUCTURES; TRANSCONDUCTANCE; TRANSITION; EXTRACTION; TRANSPORT; MOBILITY; GRAPHENE;
D O I
10.1021/acsami.9b06715
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The transport behaviors of MoS2 field-effect transistors (FETs) with various channel thicknesses are studied. In a 12 nm thick MoS2 FET, a typical switching behavior is observed with an I-on/I-off ratio of 10(6). However, in 70 nm thick MoS2 FETs, the gating effect weakens with a large off-current, resulting from the screening of the gate field by the carriers formed through the ionization of S vacancies at 300 K. Hence, when the latter is dual-gated, two independent conductions develop with different threshold voltage (VTH) and field-effect mobility (mu(FE)) values. When the temperature is lowered for the latter, both the ionization of S vacancies and the gate-field screening reduce, which revives the strong I-on/I-off ratio and merges the two separate channels into one. Thus, only one each of VTH and mu(FE) are seen from the thick MoS2 FET when the temperature is less than 80 K. The change of the number of conduction channels is attributed to the ionization of S vacancies, which leads to a temperature-dependent intra- and interlayer conductance and the attenuation of the electrostatic gate field. The defect-related transport behavior of thick MoS2 enables us to propose a new device structure that can be further developed to a vertical inverter inside a single MoS2 flake.
引用
收藏
页码:29022 / 29028
页数:7
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