Investigation of positive bias temperature instability for monolayer polycrystalline MoS2 field-effect transistors

被引：4
|
作者：
Yang, GuanHua [1 ,2 ,3 ]
Wang, JiaWei [1 ,2 ,3 ]
Niu, JieBin [1 ,2 ,3 ]
Chuai, XiChen [1 ,2 ,3 ]
Lu, CongYan [1 ,2 ,3 ]
Geng, Di [1 ,2 ,3 ]
Lu, NianDuan [1 ,2 ,3 ]
Li, Ling [1 ,2 ,3 ]
Liu, Ming [1 ,2 ,3 ]
机构：
[1] Chinese Acad Sci, Key Lab Microelect Devices & Integrated Technol, Inst Microelect, Beijing 100029, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, Nanjing 210009, Peoples R China
来源：
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY | 2020年 / 63卷 / 01期
基金：
中国国家自然科学基金;
关键词：
STRESS;
D O I：
10.1007/s11433-019-9400-2
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页数：4
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