Depth profiling of organic materials using improved ion beam conditions

被引：41
|
作者：
Cramer, H. -G. [1 ]
Grehl, T. [1 ]
Kollmer, F. [1 ]
Moellers, R. [1 ]
Niehuis, E. [1 ]
Rading, D. [1 ]
机构：
[1] ION TOF GmbH, D-48149 Munster, Germany
来源：
APPLIED SURFACE SCIENCE | 2008年 / 255卷 / 04期
关键词：
TOF-SIMS; Organic depth profiling; Low energy sputtering; C-60; Cs; O-2; Bi-3;
D O I：
10.1016/j.apsusc.2008.05.028
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We used the so-called dual beam mode of depth pro. ling to start a systematic investigation of organic depth pro. ling with a time of flight secondary ion mass spectrometer (TOF-SIMS) instrument. Similar to inorganic pro. ling, we found the dual beam mode beneficial because sample erosion and sample analysis are decoupled and can be optimised independently. We applied different primary projectiles such as C-60, O-2 and Cs for sputtering to a variety of organic specimens, using a wide range of impact energies. Results are discussed with respect to the feasibility of the different approaches to organic depth pro. ling in SIMS. (C) 2008 Elsevier B. V. All rights reserved.
引用
收藏
页码：966 / 969
页数：4
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