Depth profiling of organic materials using improved ion beam conditions

被引：41

作者：

Cramer, H. -G. ^{[1
]}

Grehl, T. ^{[1
]}

Kollmer, F. ^{[1
]}

Moellers, R. ^{[1
]}

Niehuis, E. ^{[1
]}

Rading, D. ^{[1
]}

机构：

[1] ION TOF GmbH, D-48149 Munster, Germany

来源：

APPLIED SURFACE SCIENCE | 2008年 / 255卷 / 04期

关键词：

TOF-SIMS; Organic depth profiling; Low energy sputtering; C-60; Cs; O-2; Bi-3;

D O I：

10.1016/j.apsusc.2008.05.028

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We used the so-called dual beam mode of depth pro. ling to start a systematic investigation of organic depth pro. ling with a time of flight secondary ion mass spectrometer (TOF-SIMS) instrument. Similar to inorganic pro. ling, we found the dual beam mode beneficial because sample erosion and sample analysis are decoupled and can be optimised independently. We applied different primary projectiles such as C-60, O-2 and Cs for sputtering to a variety of organic specimens, using a wide range of impact energies. Results are discussed with respect to the feasibility of the different approaches to organic depth pro. ling in SIMS. (C) 2008 Elsevier B. V. All rights reserved.

引用

页码：966 / 969

页数：4

共 50 条

[31] Depth profiling of multilayers at elevated temperatures and at changeable ion beam parameters
Galdikas, A
Levinskas, R
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 193 : 860 - 866
[32] OPTIMIZED ION-BEAM RASTER FOR SIMS SPUTTER DEPTH PROFILING
MITCHELL, DF
ARLOW, JS
PHILLIPS, JR
SPROULE, GI
[J]. SURFACE AND INTERFACE ANALYSIS, 1989, 14 (6-7) : 302 - 306
[33] ION-BEAM-INDUCED TOPOGRAPHY AND COMPOSITIONAL CHANGES IN DEPTH PROFILING
CARTER, G
NOBES, MJ
[J]. SURFACE AND INTERFACE ANALYSIS, 1992, 19 (1-12) : 39 - 49
[34] Combined Secondary Ion Mass Spectrometry Depth Profiling and Focused Ion Beam Analysis of Cu Films Electrodeposited under Oscillatory Conditions
Hai, Nguyen T. M.
Lechner, David
Stricker, Florian
Furrer, Julien
Broekmann, Peter
[J]. CHEMELECTROCHEM, 2015, 2 (05): : 664 - 671
[35] CHARACTERIZATION OF MATERIALS USING SIMS IMAGE DEPTH PROFILING
NOVAK, SW
KANBER, H
LOWDEN, R
[J]. ADVANCED CHARACTERIZATION TECHNIQUES CERAMICS, 1988, 5 : 102 - 111
[36] Dual beam depth profiling of polymer materials: comparison of C60 and Ar cluster ion beams for sputtering
Rading, D.
Moellers, R.
Cramer, H. -G.
Niehuis, E.
[J]. SURFACE AND INTERFACE ANALYSIS, 2013, 45 (01) : 171 - 174
[37] Molecular depth profiling of multilayer structures of organic semiconductor materials by secondary ion mass spectrometry with large argon cluster ion beams
Ninomiya, Satoshi
Ichiki, Kazuya
Yamada, Hideaki
Nakata, Yoshihiko
Seki, Toshio
Aoki, Takaaki
Matsuo, Jiro
[J]. RAPID COMMUNICATIONS IN MASS SPECTROMETRY, 2009, 23 (20) : 3264 - 3268
[38] Damage-Free Depth Profiling of Electronic Structures in Multilayered Organic Semiconductors by Photoelectron Spectroscopy and Cluster Ion Beam
Hu, Juntao
Wang, Dengke
Li, Peicheng
Chen, Nan
Zhang, Tao
Wu, Yan
Wu, Di
Zhao, Yongbiao
Zhu, Qiang
Fu, Zewei
Lu, Zheng-Hong
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2021, 258 (11):
[39] Depth profiling of ion implanted materials with skewed doping distributions using Fourier transform infrared spectroscopy
Katsidis, Charalambos C.
[J]. APPLIED OPTICS, 2008, 47 (02) : 213 - 223
[40] Neutron depth profiling of elemental concentration using a focused beam
ChenMayer, HH
Lamaze, GP
Mildner, DFR
Downing, RG
[J]. NEUTRONS IN RESEARCH AND INDUSTRY, INTERNATIONAL CONFERENCE, 1997, 2867 : 140 - 143

← 1 2 3 4 5 →