Dual beam depth profiling of organic materials: Variations of analysis and sputter beam conditions

被引：16
|
作者：
Rading, D. [1 ]
Moellers, R. [1 ]
Kollmer, F. [1 ]
Paul, W. [1 ]
Niehuis, E. [1 ]
机构：
[1] ION TOF GmbH, D-48149 Munster, Germany
来源：
SURFACE AND INTERFACE ANALYSIS | 2011年 / 43卷 / 1-2期
关键词：
TOF-SIMS; organic depth profiling; dual beam mode; C-60; Bi-n; Irganox; 1010; 3114; organic multilayer sample; RESOLUTION;
D O I：
10.1002/sia.3422
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The dual beam mode of depth profiling has been used to investigate the influence of sputter beam energy, angle and sample rotation on the quality of organic depth profiles in a TOF-SIMS instrument. The sample under investigation was a multilayer sample consisting of Irganox 3114 embedded in a Irganox 1010 matrix provided by NPL. C-60 sputter beam energies between 10 and 30 keV, and angles of 45 degrees and 75 degrees were used. The results are discussed with respect to depth resolution, constancy of the sputter rate and quantification possibilities. Copyright (C) 2010 John Wiley & Sons, Ltd.
引用
收藏
页码：198 / 200
页数：3
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