On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs)

被引：8
|
作者：
Chen, Tzu-Pin [2 ]
Lee, Chi-Jhung [2 ]
Lour, Wen-Shiung [1 ]
Guo, Der-Feng [3 ]
Tsai, Jung-Hui [4 ]
Liu, Wen-Chau [2 ]
机构：
[1] Natl Taiwan Ocean Univ, Dept Elect Engn, Chilung 20224, Taiwan
[2] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan
[3] Chinese Air Force Acad, Dept Elect Engn, Kangsun 820, Kaohsiung Cty, Taiwan
[4] Natl Kaohsiung Normal Univ, Dept Elect Engn, Yanchao Township 82444, Kaohsiung Cty, Taiwan
来源：
SOLID-STATE ELECTRONICS | 2009年 / 53卷 / 02期
关键词：
Composite collector; Breakdown voltage; Electron impact ionization; DEGRADATION; GAIN;
D O I：
10.1016/j.sse.2008.11.003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The breakdown behaviors of InP/InGaAs single heterojunction bipolar transistor (SHBT) and double heterojunction bipolar transistor (DHBT) are studied and demonstrated. By using a composite collector structure at the base-collector heterojunction, the undesired current-blocking effect, switching, hysteresis phenomenon usually found in an InP/InGaAs conventional DHBT are not observed in our DHBT device. Experimentally, as compared with the studied SHBT, the studied DHBT reveals the enhanced breakdown voltages, lower collector leakage current I-co, and smaller electron impact ionization alpha. Moreover, the temperature-dependent electron impact ionization characteristics and electrical reliability for both devices are also studied. Therefore, the studied DHBT device provides the promise for millimeter-wave and power circuit applications. (C) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码：190 / 194
页数：5
相关论文
共 50 条
  • [21] HIGH-SPEED INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    CHAU, HF
    BEAM, EA
    IEEE ELECTRON DEVICE LETTERS, 1993, 14 (08) : 388 - 390
  • [22] Microwave noise in InP/InGaAs and GaAs/AlGaAs heterojunction bipolar transistors
    Sakalas, P
    Garcia, M
    Zirath, H
    Willander, M
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (01) : 14 - 20
  • [23] Accelerated life test results of InGaAs/InP heterojunction bipolar transistors
    Lee, R
    GAAS IC SYMPOSIUM - 25TH ANNUAL TECHNICAL DIGEST 2003, 2003, : 74 - 77
  • [24] Neutron irradiation effects in InP/InGaAs single heterojunction bipolar transistors
    Shatalov, A
    Subramanian, S
    Dentai, A
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2000, 47 (06) : 2551 - 2556
  • [25] Development of integration process of InGaAs/InP heterojunction bipolar transistors with InP-passivated InGaAs pin photodiodes
    Kita, Toshihiro
    Yamabi, Ryuji
    Yoneda, Yoshihiro
    Sawada, Sosaku
    Yano, Hiroshi
    2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2007, : 299 - 302
  • [26] Physical modeling based on hydrodynamic simulation for the design of InGaAs/InP double heterojunction bipolar transistors
    Ge Ji
    Liu Hong-Gang
    Su Yong-Bo
    Cao Yu-Xiong
    Jin Zhi
    CHINESE PHYSICS B, 2012, 21 (05)
  • [27] Physical modeling based on hydrodynamic simulation for the design of InGaAs/InP double heterojunction bipolar transistors
    葛霁
    刘洪刚
    苏永波
    曹玉雄
    金智
    Chinese Physics B, 2012, 21 (05) : 673 - 678
  • [28] InP-based heterojunction bipolar transistors with InGaAs/GaAs strained-layer-superlattice
    Driad, R.
    Aidam, R.
    Yang, Q.
    Maier, M.
    Guellich, H.
    Schlechtweg, M.
    Ambacher, O.
    APPLIED PHYSICS LETTERS, 2011, 98 (04)
  • [29] Noise characterization for heterojunction bipolar transistors (HBTs)
    Liu, KW
    Anwar, AFM
    COMMAD 04: 2004 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES, PROCEEDINGS, 2005, : 129 - 132
  • [30] MICROWAVE-POWER INP/INGAAS/INP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS
    SONG, JI
    HONG, WP
    BHAT, R
    CHOUGH, KB
    HAYES, JR
    SUGENG, B
    WEI, CJ
    HWANG, JCM
    ELECTRONICS LETTERS, 1993, 29 (08) : 724 - 725
12345