On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs)

被引：8

作者：

Chen, Tzu-Pin ^{[2
]}

Lee, Chi-Jhung ^{[2
]}

Lour, Wen-Shiung ^{[1
]}

Guo, Der-Feng ^{[3
]}

Tsai, Jung-Hui ^{[4
]}

Liu, Wen-Chau ^{[2
]}

机构：

[1] Natl Taiwan Ocean Univ, Dept Elect Engn, Chilung 20224, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

[3] Chinese Air Force Acad, Dept Elect Engn, Kangsun 820, Kaohsiung Cty, Taiwan

[4] Natl Kaohsiung Normal Univ, Dept Elect Engn, Yanchao Township 82444, Kaohsiung Cty, Taiwan

来源：

SOLID-STATE ELECTRONICS | 2009年 / 53卷 / 02期

关键词：

Composite collector; Breakdown voltage; Electron impact ionization; DEGRADATION; GAIN;

D O I：

10.1016/j.sse.2008.11.003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The breakdown behaviors of InP/InGaAs single heterojunction bipolar transistor (SHBT) and double heterojunction bipolar transistor (DHBT) are studied and demonstrated. By using a composite collector structure at the base-collector heterojunction, the undesired current-blocking effect, switching, hysteresis phenomenon usually found in an InP/InGaAs conventional DHBT are not observed in our DHBT device. Experimentally, as compared with the studied SHBT, the studied DHBT reveals the enhanced breakdown voltages, lower collector leakage current I-co, and smaller electron impact ionization alpha. Moreover, the temperature-dependent electron impact ionization characteristics and electrical reliability for both devices are also studied. Therefore, the studied DHBT device provides the promise for millimeter-wave and power circuit applications. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：190 / 194

页数：5

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