Low-frequency noise in MgO magnetic tunnel junctions

被引：21

作者：

Nor, Anis Faridah Md ^{[1
]}

Kato, Takeharu ^{[1
]}

Ahn, Sung Jin ^{[1
]}

Daibou, Tadaomi ^{[1
]}

Ono, Kazunaga ^{[1
]}

Oogane, Mikihiko ^{[1
]}

Ando, Yasuo ^{[1
]}

Miyazaki, Terunobu ^{[1
]}

机构：

[1] Tohoku Univ, Grad Sch Engn, Dept Appl Phys, Sendai, Miyagi 9808579, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 08期

关键词：

D O I：

10.1063/1.2165142

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Noise measurements have been performed in MgO-based tunnel junctions with normalized resistance in the range of 10(5)-10(7) Omega mu m(2) and various magnetoresistance ratios were investigated. Noise measurements in the frequency range of 1-1000 Hz shows magnetically dependent pure 1/f power spectra at low frequency. The 1/f noise scales with bias voltage, indicating that the 1/f noise can be attributed to magnetic tunnel junction resistance fluctuations. Bias voltage dependence of random telegraph noise (RTN) was observed, indicating electronic origin due to the charge-trapping mechanism. In the presence of the easy-axis bias field, our data exhibit a magnetic-field dependence of RTN that originates from magnetization fluctuations. A phenomenological noise parameter, defined for the comparison of noise levels in different junctions, was shown to be independent of the junction resistance-area product in the range investigated. This observation suggests that the decrease in tunnel resistance does not play an important role in reducing 1/f noise. (C) 2006 American Institute of Physics.

引用

页数：3

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