Susceptibility of CoFeB/AlOx/Co Magnetic Tunnel Junctions to Low-Frequency Alternating Current

被引:2
|
作者
Chen, Yuan-Tsung [1 ]
Chang, Zu-Gao [1 ]
机构
[1] I Shou Univ, Dept Mat Sci & Engn, Kaohsiung 840, Taiwan
来源
NANOMATERIALS | 2013年 / 3卷 / 04期
关键词
magnetic tunnel junctions (MT[!text type='Js']Js[!/text]); indirect exchange coupling; low-frequency alternate-current magnetic susceptibility (chi(ac)) resonance frequency (f(res)); COFEB;
D O I
10.3390/nano3040574
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
This investigation studies CoFeB/AlOx/Co magnetic tunneling junction (MTJ) in the magnetic field of a low-frequency alternating current, for various thicknesses of the barrier layer AlOx. The low-frequency alternate-current magnetic susceptibility (chi(ac)) and phase angle (theta) of the CoFeB/AlOx/Co MTJ are determined using an chi(ac) analyzer. The driving frequency ranges from 10 to 25,000 Hz. These multilayered MTJs are deposited on a silicon substrate using a DC and RF magnetron sputtering system. Barrier layer thicknesses are 22, 26, and 30 angstrom. The X-ray diffraction patterns (XRD) include a main peak at 2. = 44.7 degrees from hexagonal close-packed (HCP) Co with a highly (0002) textured structure, with AlOx and CoFeB as amorphous phases. The full width at half maximum (FWHM) of the Co(0002) peak, decreases as the AlOx thickness increases; revealing that the Co layer becomes more crystalline with increasing thickness. chi(ac) result demonstrates that the optimal resonance frequency (f(res)) that maximizes the chi(ac) value is 500 Hz. As the frequency increases to 1000 Hz, the susceptibility decreases rapidly. However, when the frequency increases over 1000 Hz, the susceptibility sharply declines, and almost closes to zero. The experimental results reveal that the mean optimal susceptibility is 1.87 at an AlOx barrier layer thickness of 30 angstrom because the Co(0002) texture induces magneto-anisotropy, which improves the indirect CoFeB and Co spin exchange-coupling strength and the chi(ac) value. The results concerning magnetism indicate that the magnetic characteristics are related to the crystallinity of Co.
引用
收藏
页码:574 / 582
页数:9
相关论文
共 50 条
  • [1] Effect of Low-Frequency AC Magnetic Susceptibility and Magnetic Properties of CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
    Chen, Yuan-Tsung
    Lin, Sung-Hao
    Sheu, Tzer-Shin
    NANOMATERIALS, 2014, 4 (01) : 46 - 54
  • [2] Low-frequency noise in CoFeB/MgO/CoFeB magnetic tunnel junctions
    Scola, J.
    Polovy, H.
    Fermon, C.
    Pannetier-Lecoeur, M.
    Feng, G.
    Fahy, K.
    Coey, J. M. D.
    NOISE AND FLUCTUATIONS, 2007, 922 : 289 - +
  • [3] Low-frequency and shot noises in CoFeB/MgO/CoFeB magnetic tunneling junctions
    Arakawa, Tomonori
    Tanaka, Takahiro
    Chida, Kensaku
    Matsuo, Sadashige
    Nishihara, Yoshitaka
    Chiba, Daichi
    Kobayashi, Kensuke
    Ono, Teruo
    Fukushima, Akio
    Yuasa, Shinji
    PHYSICAL REVIEW B, 2012, 86 (22)
  • [4] Low-frequency magnetic noise in magnetic tunnel junctions
    Ren, C
    Liu, XY
    Schrag, BD
    Xiao, G
    PHYSICAL REVIEW B, 2004, 69 (10)
  • [5] Low-frequency magnetic and resistance noise in magnetic tunnel junctions
    Jiang, L
    Nowak, ER
    Scott, PE
    Johnson, J
    Slaughter, JM
    Sun, JJ
    Dave, RW
    PHYSICAL REVIEW B, 2004, 69 (05):
  • [6] Improved tunneling magnetoresistance in (Ga,Mn)As/AlOx/CoFeB magnetic tunnel junctions
    Yu, G. Q.
    Chen, L.
    Rizwan, Syed
    Zhao, J. H.
    Xu, K.
    Han, X. F.
    APPLIED PHYSICS LETTERS, 2011, 98 (26)
  • [7] Low-frequency noise in MgO magnetic tunnel junctions
    Nor, Anis Faridah Md
    Kato, Takeharu
    Ahn, Sung Jin
    Daibou, Tadaomi
    Ono, Kazunaga
    Oogane, Mikihiko
    Ando, Yasuo
    Miyazaki, Terunobu
    JOURNAL OF APPLIED PHYSICS, 2006, 99 (08)
  • [8] Low-frequency noise in MgO magnetic tunnel junctions
    Md Nor, Anis Faridah
    Kato, Takeharu
    Ahn, Sung Jin
    Daibou, Tadaomi
    Ono, Kazunaga
    Oogane, Mikihiko
    Ando, Yasuo
    Miyazaki, Terunobu
    Journal of Applied Physics, 2006, 99 (08):
  • [9] Low-frequency magnetic and resistance noise in magnetoresistive tunnel junctions
    Jiang, L
    Skovholt, JF
    Nowak, ER
    Slaughter, JM
    FLUCTUATIONS AND NOISE IN MATERIALS, 2004, : 13 - 27
  • [10] Bias polarity dependent low-frequency noise in ultra-thin AlOx-based magnetic tunnel junctions
    Chen, Chun-Yen
    Gonzalez-Ruano, Cesar
    Martinez, Isidoro
    Aliev, Farkhad G.
    Ling, Dah-Chin
    Tang, Yu-Hui
    Hong, Jhen-Yong
    SCIENTIFIC REPORTS, 2024, 14 (01):