Low-frequency noise in MgO magnetic tunnel junctions

被引：21
|
作者：
Nor, Anis Faridah Md [1 ]
Kato, Takeharu [1 ]
Ahn, Sung Jin [1 ]
Daibou, Tadaomi [1 ]
Ono, Kazunaga [1 ]
Oogane, Mikihiko [1 ]
Ando, Yasuo [1 ]
Miyazaki, Terunobu [1 ]
机构：
[1] Tohoku Univ, Grad Sch Engn, Dept Appl Phys, Sendai, Miyagi 9808579, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 08期
关键词：
D O I：
10.1063/1.2165142
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Noise measurements have been performed in MgO-based tunnel junctions with normalized resistance in the range of 10(5)-10(7) Omega mu m(2) and various magnetoresistance ratios were investigated. Noise measurements in the frequency range of 1-1000 Hz shows magnetically dependent pure 1/f power spectra at low frequency. The 1/f noise scales with bias voltage, indicating that the 1/f noise can be attributed to magnetic tunnel junction resistance fluctuations. Bias voltage dependence of random telegraph noise (RTN) was observed, indicating electronic origin due to the charge-trapping mechanism. In the presence of the easy-axis bias field, our data exhibit a magnetic-field dependence of RTN that originates from magnetization fluctuations. A phenomenological noise parameter, defined for the comparison of noise levels in different junctions, was shown to be independent of the junction resistance-area product in the range investigated. This observation suggests that the decrease in tunnel resistance does not play an important role in reducing 1/f noise. (C) 2006 American Institute of Physics.
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