XPS Analysis of ZnO thin Films Obtained by Pulsed Laser Deposition

被引：17
|
作者：
He, Jianting [1 ]
Tan, Boxue [1 ]
Su, Yuanbin [1 ]
Yang, Shulian [1 ]
Wei, Qinqin [1 ]
机构：
[1] Shandong Univ Technol Zibo, Sch Elect & Elect Engn, Zibo, Peoples R China
来源：
MANUFACTURING SCIENCE AND TECHNOLOGY, PTS 1-8 | 2012年 / 383-390卷
关键词：
XPS; ZnO; pulsed laser deposition; oxygen partial pressure; TEMPERATURE;
D O I：
10.4028/www.scientific.net/AMR.383-390.6293
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
Highly c-axis oriented ZnO thin films were deposited on n-Si (111) substrate at various oxygen partial pressures by pulsed laser deposition (PLD). X-ray diffraction (XRD), Atomic force microscopy (AFM) were used to analyze the influence of the oxygen partial pressure on the crystallization and morphology of the ZnO thin films. X-ray photoelectron spectroscopy (XPS) was used to analyze relationships between chemical shifts of XPS energy spectra and stoichiometric ratios of ZnO thin films, and quantitative relationships between content of Zn, O and oxygen partial pressures. An optimal crystallized and stoichiometric ZnO thin film was observed at the oxygen partial pressure of 6.5Pa.
引用
收藏
页码：6293 / 6296
页数：4
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