Preparation of ZnO thin films on various substrates by pulsed laser deposition

被引：42
|
作者：
Ohshima, T
Thareja, RK
Ikegami, T
Ebihara, K
机构：
[1] Kumamoto Univ, Grad Sch Sci & Technol, Kumamoto 8608555, Japan
[2] Indian Inst Technol, Dept Phys, Kanpur 208016, Uttar Pradesh, India
[3] Kumamoto Univ, Dept Elect & Comp Engn, Kumamoto 8608555, Japan
来源：
SURFACE & COATINGS TECHNOLOGY | 2003年 / 169卷
关键词：
ZnO; pulsed laser deposition; thin film; XRD; photoluminescence;
D O I：
10.1016/S0257-8972(03)00164-6
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The structural and optical properties of ZnO thin films deposited on Si (10 0), silica glass, alpha-Al2O3 (0 0 0 1) and Corning 7059 glass substrates by pulsed laser deposition have been studied. We have investigated the dependence of film properties on deposition conditions such as an ambient oxygen gas pressure (P-O2) and a substrate temperature (T-s). XRD, AFM and photoluminescence (PL) measurements were used to characterize the grown films. The ZnO thin films deposited on various substrates under optimized condition of P-O2 = 0.67 Pa and T-s = 550 degreesC were highly c-axis (0 0 2) orientated. The ZnO thin film deposited on alpha-Al2O3, (0 0 0 1) substrate under optimal condition emitted ultra-violet PL at approximately 395 nm by optically pumped excitation (355 nm) at a power of 466 kW/cm(2). (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：517 / 520
页数：4
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