An Analytical Expression for Current Gain of an IGBT

被引：0

作者：

Moon, Jin-Woo ^{[1
]}

Chung, Sang-Koo ^{[2
,3
,4
,5
,6
]}

机构：

[1] Fairchild Semiconductor, Proc Technol Dev Korea, Analog Technol Dev, Puchon, South Korea

[2] Yanbian Univ Sci & Technol, Div Comp Elect & Commun Engn, Yanji, Peoples R China

[3] Tech Univ Berlin, Berlin, Germany

[4] Univ Regensburg, Inst Appl Phys, D-8400 Regensburg, Germany

[5] Ajou Univ, Sch Engn, Suwon, South Korea

[6] Ajou Univ, Grad Sch, Suwon 441749, South Korea

来源：

JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY | 2009年 / 4卷 / 03期

关键词：

IGBT; Current Gain; Analytical Expression;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple analytical expression for a current gain of IGBT is derived in terms of the device parameters as well as a gate length dependent parameter, which allows for the determination of the current components of the device as a function of its gate length. The analytical results are compared with those from simulation results. A good agreement is found.

引用

页码：401 / 404

页数：4

共 50 条

[1] The current gain of bipolar transistor in the IGBT measurement
Parnklang, J
Niemcharoen, S
Yardsamer, S
IEEE 2000 TENCON PROCEEDINGS, VOLS I-III: INTELLIGENT SYSTEMS AND TECHNOLOGIES FOR THE NEW MILLENNIUM, 2000, : 445 - 448
[2] A two dimensional analytical model for the current distribution in a lateral IGBT
Henkel, I
Feiler, W
Kostka, A
SOLID-STATE ELECTRONICS, 2001, 45 (10) : 1725 - 1732
[3] AN ANALYTICAL EXPRESSION FOR LARGE-SIGNAL ACOUSTOELECTRIC GAIN
GAY, RKL
HARTNAGE.HL
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1969, 2 (11) : 1589 - &
[4] Semiconductor losses in voltage source and current source IGBT converters based on analytical derivation
Bierhoff, MH
Fuchs, FW
PESC 04: 2004 IEEE 35TH ANNUAL POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-6, CONFERENCE PROCEEDINGS, 2004, : 2836 - 2842
[5] ANALYTICAL EXPRESSION FOR MOSFET GATE LEAKAGE CURRENT
NEGRO, VC
GOLDSTEIN, LH
PROCEEDINGS OF THE IEEE, 1973, 61 (10) : 1509 - 1510
[6] AN ANALYTICAL EXPRESSION FOR THE CURRENT IN SHORT-BASE TRANSISTORS
DENIS, AS
PULFREY, DL
SOLID-STATE ELECTRONICS, 1995, 38 (08) : 1431 - 1436
[7] Analytical expression for transient chronoamperometric current at ultramicroband electrode
R. Senthamarai
L. Rajendran
Russian Journal of Electrochemistry, 2008, 44
[8] Analytical Expression for Transient Chronoamperometric Current at Ultramicroband Electrode
Senthamarai, R.
Rajendran, L.
RUSSIAN JOURNAL OF ELECTROCHEMISTRY, 2008, 44 (10) : 1156 - 1161
[9] IGBT Tail Current Reduction by Current Injection Technique
Eio, S.
Shammas, N. Y. A.
2008 PROCEEDINGS OF THE 43RD INTERNATIONAL UNIVERSITIES POWER ENGINEERING CONFERENCE, VOLS 1-3, 2008, : 1208 - 1211
[10] IGBT fault current limiting circuit
Chokhawala, Rahul
Castino, Giuseppe
IEEE Industry Applications Magazine, 1995, 1 (05):

← 1 2 3 4 5 →