An Analytical Expression for Current Gain of an IGBT

被引：0
|
作者：
Moon, Jin-Woo [1 ]
Chung, Sang-Koo [2 ,3 ,4 ,5 ,6 ]
机构：
[1] Fairchild Semiconductor, Proc Technol Dev Korea, Analog Technol Dev, Puchon, South Korea
[2] Yanbian Univ Sci & Technol, Div Comp Elect & Commun Engn, Yanji, Peoples R China
[3] Tech Univ Berlin, Berlin, Germany
[4] Univ Regensburg, Inst Appl Phys, D-8400 Regensburg, Germany
[5] Ajou Univ, Sch Engn, Suwon, South Korea
[6] Ajou Univ, Grad Sch, Suwon 441749, South Korea
来源：
JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY | 2009年 / 4卷 / 03期
关键词：
IGBT; Current Gain; Analytical Expression;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A simple analytical expression for a current gain of IGBT is derived in terms of the device parameters as well as a gate length dependent parameter, which allows for the determination of the current components of the device as a function of its gate length. The analytical results are compared with those from simulation results. A good agreement is found.
引用
收藏
页码：401 / 404
页数：4
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