Preparation of CuInS2 thin films by paste coating

被引：16

作者：

Xu, Jingang ^{[1
]}

Wang, Yanlai ^{[1
]}

机构：

[1] Inner Mongolia Univ, Key Lab Semicond Photovolta Technol Inner Mongoli, Sch Phys Sci & Technol, Hohhot 010021, Peoples R China

来源：

MATERIALS LETTERS | 2013年 / 99卷

关键词：

CuInS2 thin films; coating; Annealing; Optical properties; SOLAR-CELL; COPPER; LAYER;

D O I：

10.1016/j.matlet.2013.02.085

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Precursor pastes were obtained by milling In2S3 and CuS. CuInS2 thin films were successfully prepared by precursor layers, which were coated on glasses and Mo foils substrates using these pastes, and were annealed in a N-2 atmosphere. The annealed films were characterized by XRD, scanning electron microscopy (SEM) and UV-vis spectrophotometry. The results indicate that chalcopyrite CuInS2 is formed at 200 degrees C and the crystallinity of this phase is improved as the temperature rises. The compression of precursor layers before annealing step is one of the most essential factors for the preparation of perfect CuInS2 thin films. The UV-vis spectroscopy shows that the observed band gaps of the CuInS2 films increase from 1.21 to 1.45 eV corresponding to the Cu/In ratios. (c) 2013 Elsevier B.V. All rights reserved.

引用

页码：90 / 93

页数：4

共 50 条

[41] Heterogeneous reaction route to CuInS2 thin films
Lin, M
Loh, KP
Deivaraj, TC
Vittal, JJ
CHEMICAL COMMUNICATIONS, 2002, (13) : 1400 - 1401
[42] Drift velocity measurements in CuInS2 thin films
Reddy, KV
Kumar, AP
SEMICONDUCTOR DEVICES, 1996, 2733 : 403 - 405
[43] Effects of Na incorporation in CuInS2 thin films
Zribi, M
Kanzari, M
Rezig, B
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2005, 29 (03): : 203 - 207
[44] CuInS2 thin films using a new technique
Bini, S
Bindu, K
Lakshmi, M
Kartha, CS
Vijayakumar, KP
SOLID STATE PHYSICS, VOL 41, 1998, 1999, : 489 - 490
[45] The dipolar behaviour of polycrystalline CuInS2 thin films
Mahmoud, S
Eid, AH
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1998, 9 (01) : 47 - 50
[46] Preparation and Characterization of CuInS2 Thin Films for Solar Cells by Chemical Bath Deposition
TANG Hui-xiang
ChemicalResearchinChineseUniversities, 2005, (02) : 236 - 239
[47] PREPARATION AND PROPERTIES OF CUINS2 THIN-FILMS DEPOSITED BY RF-SPUTTERING
SAMAAN, ANY
WASIM, SM
HILL, AE
ARMOUR, DG
TOMLINSON, RD
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 96 (01): : 317 - 324
[48] Preparation and characterization of CuInS2 thin films for solar cells by chemical bath deposition
Tang, HX
Yan, M
Zhang, H
Ma, XY
Wang, L
Yang, DR
CHEMICAL RESEARCH IN CHINESE UNIVERSITIES, 2005, 21 (02) : 236 - 239
[49] Preparation of precursor particles by cryogenic mechanical milling for the deposition of CuInS2 thin films
Kim, K. -H.
Lee, J. K.
Alphonse, A.
Erkan, M. E.
Shin, D. -C.
Lim, D. G.
Park, B. -O
Jin, M. H. -C.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2013, 16 (01) : 226 - 230
[50] PREPARATION AND PROPERTIES OF CUINS2 THIN-FILMS PRODUCED BY THE REACTIVE SPUTTERING METHOD
KOBAYASHI, S
YU, DY
SARINANTO, MM
KOBAYASHI, Y
KANEKO, F
KAWAKAMI, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1995, 34 (4B): : L513 - L515

← 1 2 3 4 5 →