Preparation of CuInS2 thin films by paste coating

被引：16
|
作者：
Xu, Jingang [1 ]
Wang, Yanlai [1 ]
机构：
[1] Inner Mongolia Univ, Key Lab Semicond Photovolta Technol Inner Mongoli, Sch Phys Sci & Technol, Hohhot 010021, Peoples R China
来源：
MATERIALS LETTERS | 2013年 / 99卷
关键词：
CuInS2 thin films; coating; Annealing; Optical properties; SOLAR-CELL; COPPER; LAYER;
D O I：
10.1016/j.matlet.2013.02.085
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Precursor pastes were obtained by milling In2S3 and CuS. CuInS2 thin films were successfully prepared by precursor layers, which were coated on glasses and Mo foils substrates using these pastes, and were annealed in a N-2 atmosphere. The annealed films were characterized by XRD, scanning electron microscopy (SEM) and UV-vis spectrophotometry. The results indicate that chalcopyrite CuInS2 is formed at 200 degrees C and the crystallinity of this phase is improved as the temperature rises. The compression of precursor layers before annealing step is one of the most essential factors for the preparation of perfect CuInS2 thin films. The UV-vis spectroscopy shows that the observed band gaps of the CuInS2 films increase from 1.21 to 1.45 eV corresponding to the Cu/In ratios. (c) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：90 / 93
页数：4
相关论文
共 50 条
  • [31] CuInS2 thin films for solar cell applications
    Djessas, K
    Massé, G
    Ibannaim, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (04) : 1235 - 1239
  • [32] Properties of Spray ILGAR CuInS2 thin films
    Camus, C.
    Allsop, N. A.
    Gledhill, S. E.
    Bohne, W.
    Roehrich, J.
    Lauermann, I.
    Lux-Steiner, M. C.
    Fischer, Ch. -H.
    THIN SOLID FILMS, 2008, 516 (20) : 7026 - 7030
  • [33] The AC impedance of polycrystalline CuInS2 thin films
    Eid, AH
    Mahmoud, S
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1997, 8 (04) : 259 - 264
  • [34] Preparation of CuInSe2 thin films by paste coating
    Nie Hongbo
    Wang Yanlai
    Ni Peiran
    Guo Shiju
    RARE METALS, 2008, 27 (06) : 591 - 597
  • [35] PREPARATION AND PROPERTIES OF CUINS2 SEMICONDUCTOR-FILMS
    PANOV, VP
    MOVCHAN, OG
    LOMOVTSEVA, SB
    PANOVA, GD
    INORGANIC MATERIALS, 1992, 28 (03) : 394 - 396
  • [36] Electrochemical interface modification of CuInS2 thin films
    Aggour, M
    Störkel, U
    Murrell, C
    Campbell, SA
    Jungblut, H
    Hoffmann, P
    Mikalo, R
    Schmeisser, D
    Lewerenz, HJ
    THIN SOLID FILMS, 2002, 403 : 57 - 61
  • [37] Influence of KCN treatment on CuInS2 thin films
    Ogawa, Y
    JagerWaldau, A
    Hua, TH
    Hashimoto, Y
    Ito, K
    APPLIED SURFACE SCIENCE, 1996, 92 : 232 - 236
  • [38] EFFECT OF ANTIMONY INCORPORATION IN CuInS2 THIN FILMS
    Ben Rabeh, M.
    Chaglabou, N.
    Kanzari, M.
    CHALCOGENIDE LETTERS, 2009, 6 (04): : 155 - 161
  • [39] Electrical properties of coevaporated CuInS2 thin films
    Scheer, R
    Alt, M
    Luck, I
    Lewerenz, HJ
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1997, 49 (1-4) : 423 - 430
  • [40] Effect of annealing on properties of CuInS2 thin films
    Brini, R
    Kanzari, M
    Rezig, B
    Werckmann, J
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2005, 30 (03): : 153 - 158
12345