Investigation of the Filter Amplifiers using the TVS Diode for ESD Protection

被引：0
|
作者：
Gao, Yang [1 ]
Wang, Junchao [1 ]
Nawaz, Sharif M. [2 ]
Zhang, Fan [3 ]
Liu, Yuhuai [1 ]
Liou, Juin J. [1 ]
机构：
[1] Zhengzhou Univ, Dept Informat Engn, Zhengzhou, Peoples R China
[2] Natl Ctr Int Joint Res Elect Mat & Syst, Zhengzhou, Henan, Peoples R China
[3] Univ Elect Sci & Technol, Phys Sch, Chengdu, Peoples R China
来源：
2019 8TH INTERNATIONAL SYMPOSIUM ON NEXT GENERATION ELECTRONICS (ISNE) | 2019年
基金：
中国国家自然科学基金;
关键词：
filter; low-noise amplifier (LNA); transient voltage suppressor (TVS) diode; electro-static discharge (ESD);
D O I：
10.1109/isne.2019.8896466
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper investigates the immunity and effect of a low-noise amplifier (LNA) using a transient voltage suppressor (TVS) diode for electro-static discharge (ESD) protection. The introduced off-chip ESD device, in our case a TVS diode, increases the power when the LNA fails, but also results in mismatch in terms of S-parameters and noise figure. It is especially obvious when frequencies rise higher. To overcome this side effect, the filter can be constructed, providing standard Chebyshev filter matching for the LNA. This method has certain reference value for the further research of semiconductor protection under ESD pulses.
引用
收藏
页数：3
相关论文
共 50 条
  • [21] ESD protection for SOI technology using under-the-BOX (substrate) diode structure
    Salman, Akram A.
    Pelella, Mario M.
    Beebe, Stephen G.
    Subba, Niraj
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2006, 6 (02) : 292 - 299
  • [22] Investigation of ESD Protection in SiC BCD Process
    Lai, Pengyu
    Wang, Hui
    Abbasi, Affan
    Roy, Sajib
    Rashid, Arman
    Mantooth, Alan
    Chen, Zhong
    2019 IEEE 7TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA 2019), 2019, : 405 - 409
  • [23] Two high dynamic range mmW amplifiers in SMT package with ESD protection
    Phan, Khanhtran
    Fujii, Kohei
    Morkner, Henrik
    2007 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-4, 2007, : 1209 - 1212
  • [24] A novel on-chip ESD protection circuit for GaAsHBT RF power amplifiers
    Ma, Y
    Li, GP
    JOURNAL OF ELECTROSTATICS, 2003, 59 (3-4) : 211 - 227
  • [25] ESD protection design considerations for InGaP/GaAs HBT RF power amplifiers
    Ma, Y
    Li, GP
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2005, 53 (01) : 221 - 228
  • [26] ESD Protection Design for Microwave/Millimeter Wave Low-Noise Amplifiers
    Tsai, Ming-Hsien
    Hsu, Shawn S. H.
    2014 IEEE INTERNATIONAL WIRELESS SYMPOSIUM (IWS), 2014,
  • [27] Optimization on Layout Style of Diode Stackup for On-Chip ESD Protection
    Lin, Chun-Yu
    Fan, Mei-Lian
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2014, 14 (02) : 775 - 777
  • [28] Novel diode-chain triggering SCR circuits for ESD protection
    Jang, SL
    Gau, MS
    Lin, JK
    SOLID-STATE ELECTRONICS, 2000, 44 (07) : 1297 - 1303
  • [29] ESD protection circuits with novel MOS-bounded diode structures
    Ker, MD
    Chuang, CH
    2002 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL V, PROCEEDINGS, 2002, : 533 - 536
  • [30] Two high dynamic range mmW amplifiers in SMT package with ESD protection
    Phan, Khanhtran
    Fujii, Kohei
    Morkner, Henrik
    2007 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, VOLS 1 AND 2, 2007, : 508 - 511
12345