Investigation of the Filter Amplifiers using the TVS Diode for ESD Protection

被引：0

作者：

Gao, Yang ^{[1
]}

Wang, Junchao ^{[1
]}

Nawaz, Sharif M. ^{[2
]}

Zhang, Fan ^{[3
]}

Liu, Yuhuai ^{[1
]}

Liou, Juin J. ^{[1
]}

机构：

[1] Zhengzhou Univ, Dept Informat Engn, Zhengzhou, Peoples R China

[2] Natl Ctr Int Joint Res Elect Mat & Syst, Zhengzhou, Henan, Peoples R China

[3] Univ Elect Sci & Technol, Phys Sch, Chengdu, Peoples R China

来源：

2019 8TH INTERNATIONAL SYMPOSIUM ON NEXT GENERATION ELECTRONICS (ISNE) | 2019年

基金：

中国国家自然科学基金;

关键词：

filter; low-noise amplifier (LNA); transient voltage suppressor (TVS) diode; electro-static discharge (ESD);

D O I：

10.1109/isne.2019.8896466

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper investigates the immunity and effect of a low-noise amplifier (LNA) using a transient voltage suppressor (TVS) diode for electro-static discharge (ESD) protection. The introduced off-chip ESD device, in our case a TVS diode, increases the power when the LNA fails, but also results in mismatch in terms of S-parameters and noise figure. It is especially obvious when frequencies rise higher. To overcome this side effect, the filter can be constructed, providing standard Chebyshev filter matching for the LNA. This method has certain reference value for the further research of semiconductor protection under ESD pulses.

引用

页数：3

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