A Monolithic DC-70-GHz Broadband Distributed Amplifier Using 90-nm CMOS Process

被引：0

作者：

Chen, Si-Hua ^{[1
]}

Weng, Shou-Hsien ^{[1
]}

Liu, Yu-Cheng ^{[1
]}

Chang, Hong-Yeh ^{[1
]}

Tsai, Jeng-Han ^{[2
]}

Li, Meng-Han ^{[1
]}

Huang, Shu-Yan ^{[1
]}

机构：

[1] Natl Cent Univ, Dept Elect Engn, Jhongli 32001, Taiwan

[2] Natl Taiwan Normal Univ, Dept Appl Elect Technol, Taipei, Taiwan

来源：

2013 EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2013年

关键词：

Cascaded single-stage amplifier (CSSDA); conventional distributed amplifier (CDA); CMOS; inductive peaking technique; and m-derived network;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A monolithic DC-70-GHz distributed amplifier (DA) using a 90-nm CMOS process is presented in this paper. The DA is composed of a cascaded single-stage distributed amplifier (CSSDA) and a conventional distributed amplifier (CDA). The CSSDA is adopted as the first-stage to increase the small-signal gain of the DA. The CDA is adopted as the secondstage for the higher output power. Moreover, the modified mderived network and inductive peaking technique are adopted to further extend the gain and bandwidth of the DA. The measured average small-signal gain is 13 dB with a small-signal bandwidth from DC to 70 GHz. The measured maximum output 1-dB compression point (OP1dB) is 1 dBm. The chip size of the proposed DA is 0.99 x 0.79 mm(2).

引用

页码：1511 / 1514

页数：4

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