A Transformer-Coupled Power Amplifier in 90-nm CMOS Process for V-band Applications

被引：0

作者：

Chen, Juo-Chen ^{[1
,2
]}

Chiu, Wei-Hsiang ^{[1
]}

Chiang, Yen-Chung ^{[1
]}

机构：

[1] Natl Chung Hsing Univ, Dept Elect Engn, 145 Xingda Rd, Taichung, Taiwan

[2] Natl Chin Yi Univ Technol, Dept Elect Engn, 57,Sect 2,Zhongshan Rd, Taichung, Taiwan

来源：

2017 IEEE ASIA PACIFIC MICROWAVE CONFERENCE (APMC) | 2017年

关键词：

CMOS process technology; power amplifier; power-combining; transformer; V band;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a three-stage common-source power amplifier (PA) fabricated in the TSMC 90-nm CMOS process technology for V-band applications is presented. The proposed PA adopts the transformer structure to split and combine power and to implement the matching network. The CMOS PA achieves a measured gain of 17.8 dB, and its saturated output power, P-sat, is 13.8 dBm at the 10-dBm input power. The measured OP1dB is 13.36 dBm and the peak power added efficiency (PAE) is 16.9%. The chip size of the proposed PA is 1.05 x 0.47 mm(2), and the power dissipation is 139 mW under a 1.2-V supply voltage.

引用

页码：318 / 321

页数：4

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