A 0.47-0.66 pJ/bit, 4.8-8 Gb/s I/O Transceiver in 65 nm CMOS

被引:43
|
作者
Song, Young-Hoon [1 ]
Bai, Rui [2 ]
Hu, Kangmin [2 ]
Yang, Hae-Woong [1 ]
Chiang, Patrick Yin [2 ]
Palermo, Samuel [1 ]
机构
[1] Texas A&M Univ, Dept Elect & Comp Engn, College Stn, TX 77843 USA
[2] Oregon State Univ, Sch Elect Engn & Comp Sci, Corvallis, OR 97331 USA
关键词
High-speed I/O; injection-locked oscillator; low-power; low-voltage regulator; poly-phase filter; transceiver; voltage-mode driver; SOURCE SYNCHRONOUS RECEIVER; SERIAL LINK RECEIVER; MW/GB/S;
D O I
10.1109/JSSC.2013.2249812
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A low-power forwarded-clock I/O transceiver architecture is presented that employs a high degree of output/input multiplexing, supply-voltage scaling with data rate, and low-voltage circuit techniques to enable low-power operation. The transmitter utilizes a 4: 1 output multiplexing voltage-mode driver along with 4-phase clocking that is efficiently generated from a passive poly-phase filter. The output driver voltage swing is accurately controlled from 100-200 mV(ppd) using a low-voltage pseudo-differential regulator that employs a partial negative-resistance load for improved low frequency gain. 1:8 input de-multiplexing is performed at the receiver equalizer output with 8 parallel input samplers clocked from an 8-phase injection-locked oscillator that provides more than 1UI de-skew range. In the transmitter clocking circuitry, per-phase duty-cycle and phase-spacing adjustment is implemented to allow adequate timing margins at low operating voltages. Fabricated in a general purpose 65 nm CMOS process, the transceiver achieves 4.8-8 Gb/s at 0.47-0.66 pJ/b energy efficiency for V-DD = 0.6-0.8 V.
引用
收藏
页码:1276 / 1289
页数:14
相关论文
共 50 条
  • [21] A Fully-Integrated 40-Gb/s Transceiver in 65-nm CMOS Technology
    Chen, Ming-Shuan
    Shih, Yu-Nan
    Lin, Chen-Lun
    Hung, Hao-Wei
    Lee, Jri
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2012, 47 (03) : 627 - 640
  • [22] A 33.33 Gb/s/wire pin-efficient 1.06 pJ/bit wireline transceiver based on CNRZ-5 for Chiplet in 28 nm CMOS
    Lai, Mingche
    Zhang, Geng
    Lv, Fangxu
    Zheng, Xuqiang
    Wang, Heming
    Lv, Dongbin
    Xu, Chaolong
    Qi, Xingyun
    MICROELECTRONICS JOURNAL, 2022, 130
  • [23] A 0.06 mm2, 0.9 pJ/bit, 25 Gb/s Optical Receiver Front-end Module in 65 nm CMOS
    Takahashi, Yasuhiro
    Tominaga, Koji
    2024 13TH INTERNATIONAL CONFERENCE ON COMMUNICATIONS, CIRCUITS AND SYSTEMS, ICCCAS 2024, 2024, : 70 - 74
  • [24] An 8-bit 208 MS/s SAR ADC in 65 nm CMOS
    Zhu, Zhangming
    Wang, Qiyu
    Xiao, Yu
    Song, Xiaoli
    Yang, Yintang
    ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2013, 76 (01) : 129 - 137
  • [25] An 8-bit 208 MS/s SAR ADC in 65 nm CMOS
    Zhangming Zhu
    Qiyu Wang
    Yu Xiao
    Xiaoli Song
    Yintang Yang
    Analog Integrated Circuits and Signal Processing, 2013, 76 : 129 - 137
  • [26] 5 Gb/s Optical Transceiver for MEMS Tunable HCG-VCSEL in 65 nm CMOS Sean
    Quintans, Sean Kane Lloyd M.
    Narcida, Francesca Bea, V
    Tordesillas, Janette Eira A.
    Sabino, Maria Patricia Rouelli G.
    Alvarez, Anastacia B.
    de Leon, Maria Theresa G.
    Hizon, John Richard E.
    Santos, Christopher G.
    Rosales, Marc D.
    2020 17TH INTERNATIONAL SOC DESIGN CONFERENCE (ISOCC 2020), 2020, : 47 - 48
  • [27] A 8-Gb/s 0.256-pJ/b Transceiver for 5-mm On-Chip Interconnects in 130-nm CMOS
    Jia, Xiangdong
    Cowan, Glenn E. R.
    2017 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2017, : 762 - 765
  • [28] A 2.56-Gb/s Serial Wireline Transceiver That Supports an Auxiliary Channel in 65-nm CMOS
    Wang, Xiaoran
    Liu, Tianwei
    Guo, Shita
    Thornton, Mitchell A.
    Gui, Ping
    IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2020, 28 (01) : 12 - 22
  • [29] A 12.3-mW 12.5-Gb/s Complete Transceiver in 65-nm CMOS Process
    Fukuda, Koji
    Yamashita, Hiroki
    Ono, Goichi
    Nemoto, Ryo
    Suzuki, Eiichi
    Masuda, Noboru
    Takemoto, Takashi
    Yuki, Fumio
    Saito, Tatsuya
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2010, 45 (12) : 2838 - 2849
  • [30] Robust ESD Protection Design for 40-Gb/s Transceiver in 65-nm CMOS Process
    Lin, Chun-Yu
    Chu, Li-Wei
    Ker, Ming-Dou
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (11) : 3625 - 3631