Transient and Crosstalk Analysis of Doped and Dielectric Inserted MLGNR Interconnects

被引:0
|
作者
Yeleti, Haritha [1 ]
Kumar, Mekala Girish [1 ]
Chandel, Rajeevan [2 ]
Agrawal, Yash [3 ]
机构
[1] Vidya Jyothi Inst Technol, Dept Elect & Commun Enginnering, Hyderabad, India
[2] Natl Inst Technol, Dept Elect & Commun Enginnering, Hamirpur, HP, India
[3] DA Inst Informat & Commun Technol, VLSI & Embedded R Grp, Gandhinagar, Gujarat, India
关键词
Crosstalk; Delay; GNR; Interconnects;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In the present work, performance of normal multilayer graphene nanoribbon (NMLGNR), doped MLGNR (DMLGNR) and dielectric inserted MLGNR (DiMLGNR) are analysed using coupled line interconnect system. The transient and crosstalk analysis of NMLGNR, DMLGNR and DiMLGNR interconnects are presented. By performing transient analysis, the average propagation delay for DiMLGNR exhibits the best performance amongst the three types of interconnect-systems under consideration. The crosstalk delay of DiMLGNR interconnect is 62.7% and 25.7% lesser compared to that of NMLGNR and DMLGNR interconnects respectively.
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页数:3
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