Time-dependent device characteristics in InAs/AlSb HEMTs

被引：1
|
作者：
Ho, Han-Chieh [1 ]
Liu, Hong-Kai [1 ]
He, Wei-Zhi [1 ]
Lin, Heng-Kuang [1 ]
Hsin, Yue-Ming [1 ]
机构：
[1] Natl Cent Univ, Dept Elect Engn, Jhongli 32001, Taiwan
来源：
SOLID-STATE ELECTRONICS | 2012年 / 73卷
关键词：
InAs/AlSb; High-electron-mobility transistor (HEMT); LOW-POWER; HIGH-SPEED; TRANSPORT;
D O I：
10.1016/j.sse.2012.03.006
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This study investigates the device characteristics of InAs/AlSb HEMTs subjected to different periods of time storage in atmospheric ambiance after fabrication. Devices that have undergone 6 months of storage exhibit an increase of saturation drain current (I-DSS). increase of peak transconductance, decrease of gate leakage (I-G) and shifts of threshold voltage (Vth). The charge trapping effect was investigated by using a pulsed I-D-V-DS measurement, indicating that surface traps or defects were generated in the device that had undergone a 6-month storage. The decrease of I-G and shifts of Vth were found to correlate with material oxidization in the gate to the channel region, where an oxygen signal was detected by energy-dispersive analysis with X-ray (EDAX). Variances of gate capacitances (C-gs) extracted by the small-signal model were also used to justify the shifts of Vth Crown Copyright (C) 2012 Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：51 / 55
页数：5
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