Time-dependent device characteristics in InAs/AlSb HEMTs

被引：1

作者：

Ho, Han-Chieh ^{[1
]}

Liu, Hong-Kai ^{[1
]}

He, Wei-Zhi ^{[1
]}

Lin, Heng-Kuang ^{[1
]}

Hsin, Yue-Ming ^{[1
]}

机构：

[1] Natl Cent Univ, Dept Elect Engn, Jhongli 32001, Taiwan

来源：

SOLID-STATE ELECTRONICS | 2012年 / 73卷

关键词：

InAs/AlSb; High-electron-mobility transistor (HEMT); LOW-POWER; HIGH-SPEED; TRANSPORT;

D O I：

10.1016/j.sse.2012.03.006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study investigates the device characteristics of InAs/AlSb HEMTs subjected to different periods of time storage in atmospheric ambiance after fabrication. Devices that have undergone 6 months of storage exhibit an increase of saturation drain current (I-DSS). increase of peak transconductance, decrease of gate leakage (I-G) and shifts of threshold voltage (Vth). The charge trapping effect was investigated by using a pulsed I-D-V-DS measurement, indicating that surface traps or defects were generated in the device that had undergone a 6-month storage. The decrease of I-G and shifts of Vth were found to correlate with material oxidization in the gate to the channel region, where an oxygen signal was detected by energy-dispersive analysis with X-ray (EDAX). Variances of gate capacitances (C-gs) extracted by the small-signal model were also used to justify the shifts of Vth Crown Copyright (C) 2012 Published by Elsevier Ltd. All rights reserved.

引用

页码：51 / 55

页数：5

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